FDS9431A Datasheet, Fairchild Semiconductor

* -3.5 A, -20 V. RDS(ON) = 0.130 Ω @ VGS = -4.5 V RDS(ON) = 0.180 Ω @ VGS = -2.5 V.
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* Fast switching speed. High density cell design for extremely l.

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* DC/DC converter Power management Load switch Battery protection D D D D 5 6 7 4 3 2 1 SO-8.

This P-Channel 2.5V specified MOSFET is produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process has been especially tailored to minimize on-state resistance and yet maintain superior switching perfor.